1 / 4 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 februar y 20 10 as w350 5 - 40 00 mhz mmic amplifier parameters units typical frequency mhz 100 250 gain db 24.7 23 s11 db - 15 - 15 s22 db - 18 - 14.5 output ip3 dbm 41 1) 40 2) noise figure db 8.0 7.1 output p1db dbm 23.5 23 current ma 150 150 device voltage v 5 5 1) oip3 is measured with two tones at an output power of +10 dbm/tone separated by 1 mhz. 2) oip3 is measured with two tones at an output power of +7 dbm/tone separated by 1 mhz. parameters units min typ max testing frequency mhz 100 gain db 23 24.7 s11 db - 15 s22 db - 18 output ip3 dbm 39 41 noise figure db 8.0 8.3 output p1db dbm 22 23.5 current ma 135 150 165 device voltage v 5 parameters rating operating case temperature - 40 to + 85 c storage temperature - 40 to + 150 c device voltage +6 v operating junction temper a ture + 150 c input rf power ( cw, 50ohm matched)* 25 dbm * please find the max. input power data from http://www.asb.co.kr/pdf/maximum_input_power_ana lysis.pdf feature s description absolute maximum ratings 24.7 db gain at 100 mhz 23.5 dbm p1db at 100 mhz 41 dbm output ip3 at 100 mhz mttf > 100 years single supply the ASW350, a power amplifier mmic, has a high linearity , high gain, and high efficiency over a wide range of frequency, being suitable for use in both r e- ceiver and transmitter of telecommunication systems up to 4 ghz. th e amplifier is available in a n sot - 89 package and passes through the stringent dc, rf, and reliability tests. product specifications typical perfor m ance ASW350 package style: sot - 89 application circuit if 250 mhz pin configuration pin no. function 1 rf in 2 gnd 3 rf out / bias
2 / 4 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 februar y 20 10 as w350 5 - 40 00 mhz mmic amplifier pin no. function 1 rf in 2 gnd 3 rf out / bias mounting recommendation (in mm) outline drawing note : 1. the number and size of ground via holes in a circuit board is critical for thermal and rf grounding consi d erations. 2. we recommend that the ground via holes be placed on the bottom of the lead pin 2 and exposed pad of the device for better rf and thermal performance, as shown in the drawing at the left side. symbols dimensions (in mm) min nom max a 1.40 1.50 1.60 l 0.89 1.04 1.20 b 0.36 0.42 0.48 b1 0.41 0.47 0.53 c 0.38 0.40 0.43 d 4.40 4.50 4.60 d1 1.40 1. 60 1.75 e 3.64 --- 4.25 e1 2.40 2.50 2.60 e1 2.90 3.00 3.10 h 0.35 0.40 0.45 s 0.65 0.75 0.85 e 1.40 1.50 1.60 as w350 pxxxx lot no. part no. part number description ordering information
3 / 4 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 februar y 20 10 as w350 5 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +10 dbm/tone separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 80 120 magnitude s21 (db) 24.5 24.3 magnitude s11 (db) - 13 - 11 magnitude s22 (db) - 18 - 16 output p1db (dbm) 23.5 output ip3 1) (dbm) 41 noise figure (db) 8.0 dev ice voltage (v) 5 current (ma) 150 if 80 ~ 120 mhz +5 v 40 60 80 100 120 140 160 0 5 10 15 20 25 30 gain (db) frequency (mhz) 40 60 80 100 120 140 160 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 40 60 80 100 120 140 160 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz) c1=82 pf l1=390 nh c3=1000 pf rf in rf out ASW350 c2=56 pf vcc=5 v c4=100pf c5=1 m f d1=5.6v zener diode r1=1.5 w l2=47 nh
4 / 4 asb inc. sales@asb .co.kr tel: +82 - 42 - 528 - 7223 februar y 20 10 as w350 5 - 40 00 mhz mmic amplifier 1) oip3 is measured with two tones at an output power of +7 dbm/tone separated by 1 mhz. board layout ( fr4, 40x40 mm 2 , 0.8t) schematic s - parameters & k - factor application circuit frequency (mhz) 250 magnitude s21 (db) 23 magnitude s11 (db) - 15 magnitude s22 (db) - 14.5 output p1db (dbm) 23 output ip3 1) (dbm) 40 noise figure (db) 7.1 device voltage (v) 5 current (ma) 150 250 mhz +5 v c1=27 pf l1=390 nh c3=1000 pf rf in rf out ASW350 c2=18 pf vcc=5 v c4=100pf c5=1 m f d1=5.6v zener diode r1=1.5 w l2=27 nh 0 100 200 300 400 500 0 5 10 15 20 25 30 gain (db) frequency (mhz) 0 100 200 300 400 500 -25 -20 -15 -10 -5 0 s11 (db) frequency (mhz) 0 100 200 300 400 500 -25 -20 -15 -10 -5 0 s22 (db) frequency (mhz) 0 500 1000 1500 2000 2500 3000 3500 0 1 2 3 4 5 stability factor frequency (mhz)
|
